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DCR1610F28
Phase Control Thyristor Preliminary Information
DS5928-1.1 July 2009 (LN26822)
FEATURES
Double Side Cooling High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 2800V 1610A 21500A 1500V/s 1000A/s
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 2800 2600 2400 Conditions
* Higher dV/dt selections available
DCR1610F28 DCR1610F26 DCR1610F24
Tvj = -40 to 125 C C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Outline type code: F (See Package Details for further information)
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1610F28
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
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DCR1610F28
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60 unless stated otherwise C
Symbol Double Side Cooled IT(AV) IT(RMS) IT
Parameter
Test Conditions
Max.
Units
Mean on-state current RMS value Continuous (direct) on-state current
Half wave resistive load -
1607 2524 2353
A A A
SURGE RATINGS
Symbol ITSM It
2
Parameter Surge (non-repetitive) on-state current I t for fusing
2
Test Conditions 10ms half sine, Tcase = 125 C VR = 0
Max. 21.5 2.3
Units kA MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 23kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 22.0 Max. 0.0184 0.0333 0.0418 0.004 0.008 135 125 125 25.0 Units C/W C/W C/W C/W C/W C C C kN
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DCR1610F28
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current
Test Conditions At VRRM/VDRM, Tcase = 125 C To 67% VDRM, Tj = 125 gate open C, From 67% VDRM to 2x IT(AV) Gate source 30V, 10 , tr < 0.5s, Tj = 125 C
Repetitive 50Hz Non-repetitive
Min. -
Max. 100 1500 250 1000
Units mA V/s A/s A/s
VT(TO)
Threshold voltage - Low level Threshold voltage - High level
100A to 1000A at Tcase = 125 C 1000A to 4000A at Tcase = 125 C 100A to 1000A at Tcase = 125 C 1000A to 4000A at Tcase = 125 C VD = 67% VDRM, gate source 30V, 10 tr = 0.5s, Tj = 25 C
-
0.8 0.91 0.35 0.245 3
V V m m s
rT
On-state slope resistance - Low level On-state slope resistance - High level
tgd
Delay time
tq
Turn-off time
Tj = 125 VR = 100V, dI/dt = 5A/s, C, dVDR/dt = 20V/s linear to 2500V
-
600
s
QS IL IH
Stored charge Latching current Holding current
IT = 1000A, tp = 1000us,Tj = 125 C, dI/dt =5A/s, Tj = 25 VD = 5V C, Tj = 25 RG-K = , ITM = 500A, IT = 5A C,
2500 -
3500 3 300
C A mA
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DCR1610F28
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT VGD IGT IGD
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM = 5V, Tcase = 25 C At 50% VDRM, Tcase = 125 C VDRM = 5V, Tcase = 25 C At 50% VDRM, Tcase = 125 C
Max. 1.5 0.4 250 10
Units V V mA mA
CURVES
4000 Instantaneous on-state current, IT - (A) 3500 3000 2500 2000 1500 1000 500 0 0.80 max 125C min 25C max 25C min 125C
1.00
1.20
1.40
1.60
1.80
2.00
2.20
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION VTM = A + Bln (IT) + C.IT+D. IT
A = 0.746516 B = -0.012797 C = 0.000146 D = 0.010555 these values are valid for Tj = 125 for IT 100A to 4000A C
Where
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DCR1610F28
SEMICONDUCTOR
16 14 Mean power dissipation - (kW) 12 10 8 6 4 2 0 0 1000 2000 3000 Mean on-state current, IT(AV) - (A) 4000 180 120 90 60 30
130 120 ( oC ) 110 100 90 80 70 60 50 40 30 20 10 0 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) 180 120 90 60 30
Fig.3 On-state power dissipation - sine wave
Maximum case temperature, T
case
Fig.4 Maximum permissible case temperature, double side cooled - sine wave
125 - ( C) 180 120 90 60 30
16 14 Mean power dissipation - (kW) 12 10 8 6 4 2 d.c. 180 120 90 60 30
Heatsink
100
Maximum heatsink temperature, T
75
50
25
0 0 500 1000 1500 2000 2500
0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 5000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature, double side cooled - sine wave
Fig.6 On-state power dissipation - rectangular wave
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DCR1610F28
SEMICONDUCTOR
125 Maximum permissible case temperature , T case -( C)
Maximum heatsink temperature T heatsink -(o C)
125
100
d.c. 180 120 90 60 30
100
d.c. 180 120 90 60 30
75
75
50
50
25
25
0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A)
0 0 1000 2000 3000 Mean on-state current, IT(AV) - (A) 4000
Fig.7 Maximum permissible case temperature, double side cooled - rectangular wave
Fig.8 Maximum permissible heatsink temperature, double side cooled - rectangular wave
1 7.5608 0.6877 6.7211 0.1910 11.5564 4.2216 2 4.0772 0.2537 4.6219 0.0158 8.5810 6.0269 3 3.8420 0.0614 15.5387 5.0011 4.7942 0.0166 4 2.8671 0.0101 14.8631 3.3169 8.3643 0.2255
45.0 Double Side Cooled 40.0
Double side cooled Anode side cooled
Ri (C/kW) Ti (s) Ri (C/kW) Ti (s) Ri (C/kW) Ti (s)
Thermal Impedance Zth(j-c) ( C/kW )
Cathode Side Cooled
Cathode side cooled
35.0 30.0 25.0 20.0
Anode Side Cooled
i4
Z th
i1
[ Ri (1 exp(T / Ti )]
Rth(j-c) Conduction
15.0 10.0 5.0 0.0 0.001
Double side cooling AZth (z) A sine. rect. 180 3.19 2.14 120 3.72 3.10 90 4.29 3.64 60 4.81 4.23 30 5.22 4.88 15 5.40 5.22
Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c.
A
180 120 90 60 30 15
0.01
0.1
1
10
100
Time ( s )
Anode Side Cooling AZth (z) sine. rect. 2.97 2.03 3.43 2.89 3.92 3.36 4.36 3.87 4.69 4.41 4.84 4.70
Cathode Sided Cooling AZth (z) A sine. rect. 180 2.95 2.02 120 3.40 2.87 90 3.88 3.34 60 4.31 3.84 30 4.64 4.37 15 4.79 4.65
Fig.9 Maximum (limit) transient thermal impedance - junction to case ( C/kW)
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DCR1610F28
SEMICONDUCTOR
60
25 Conditions: Tcase = 125C VR =0 Pulse width = 10ms
6 Conditions: Tcase= 125C VR = 0 half-sine wave ITSM
2
50
Surge current, I TSM - (kA)
Surge current, ITSM- (kA)
20
40
4
I t (MA s)
2
30
It
15
20
2
10
10 1 10 100
0 1 10
0 100
Number of cycles
Fig.10 Multi-cycle surge current
Pulse width, tP - (ms)
Fig.11 Single-cycle surge current
9000 8000 7000 Stored Charge, Q S - (uC) 6000 5000 4000 3000 2000 1000 0 0 20 40 60 Qsmin = 1306.826*(di/dt)0.3971 Conditions : Tj = 125oC, IF= 1000A tp = 1000us VRM = -100V Qsmax = 2060.337*(di/dt)0.3349
700
600 Reverse recovery current, I RR - (A)
500
Conditions: Tj = 125oC IF = 1000A tp = 1000us VRM = -100V
IRRmax = 41.043*(di/dt)0.6867
400
300
200 IRRmin = 32.398*(di/dt)0.7099 100 0 0 10 20 30 40 50 60
Rate of decay of on-state current, di/dt - (A/us)
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge vs di/dt
Fig.13 Reverse recovery current vs di/dt
2
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DCR1610F28
SEMICONDUCTOR
10 9
Pulse Width us 100 200 500 1000 10000 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 -
Gate trigger voltage, VGT - (V)
8 7 6 5 4 3 2 1 0 0
400 150 125 100 25 -
Upper Limit
Preferred gate drive area
Tj = 125 C
o
Tj = 25oC
Tj = -40oC
Lower Limit
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C
25
Gate trigger voltage, VGT - (V)
20
15
10
5
0 0 1 2 3 4 5 6 7 8 9 10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR1610F28
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK HOLE O3.60 X 2.00 DEEP (IN BOTH ELECTRODES)
20 OFFSET (NOM.) TO GATE TUBE
O73.0 MAX
CATHODE
O1.5
O47.0 NOM
GATE ANODE O47.0 NOM
Device DCR1003SF18 DCR1006SF28 DCR1008SF36 DCR1020F65 DCR1050SF42 DCR1180F52 DCR1274SF18 DCR1275SF28 DCR1277SF36 DCR1279SF48 DCR1350F42 DCR1610F28 DCR1640F28 DCR1830F22 DCR810F85 DCR840F48 DCR890F65 DCR950F65
Maximum Minimum Thickness Thickness (mm) (mm) 26.415 25.865 26.49 25.94 26.72 26.17 27.1 26.55 26.72 26.17 26.84 26.29 26.415 25.865 26.49 25.94 26.72 26.17 26.84 26.29 26.72 26.17 26.49 25.94 26.49 25.94 26.415 25.865 27.46 26.91 26.84 26.29 27.1 26.5 27.1 26.5
FOR PACKAGE HEIGHT SEE TABLE
Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F
Fig.16 Package outline
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DCR1610F28
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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